姓名:刘炜
职称:副教授
学科:微电子与固体电子学
E-mail:liuwei127@nwpu.eud.cn
主要研究方向:
化合物半导体光电子材料与器件。
教育背景:
2013年9月-2016年6月中国科学院大学博士
2006年6月-2007年6月武汉大学物理科学与技术学院硕士
2001年9月-2005年6月武汉大学物理科学与技术学院本科
工作履历:
2018年7月-至今澳门永利唯一官网304副教授
2016年7月-2018年6月中国科学院半导体研究所博士后
2007年7月-2011年7月中国电子科技集团公司第四十四研究所工程师
讲授课程:
[1]微电子制造工艺概论,本科生课程,32学时,春季
[2]光电子技术,本科生课程,32学时,秋季
[3]半导体光电子学,研究生课程,20学时,春季
科研工作及主持项目情况:
[1]国家自然科学基金面上项目,62074129,红色InGaN量子点的外延生长及性能调控机理研究,2021.01-2024.12,主持
[2]国家自然科学基金青年科学基金项目,61604026,基于MOCVD技术的自组装绿光InGaN量子点发光机理研究,2017.01-2019.12,主持
[3]陕西省自然科学基础研究计划一般项目(面上),2019JM-452,高In组分InGaN量子点的发光特性及其载流子动力学研究,2019.1-2020.12,主持
[4]第60批中国博士后科学基金面上资助一等资助,2016M600115,自组装绿光InGaN量子点的生长动力学研究,2017.01-2018.06,主持
主要论著及代表性论文:
Wei Liu,et al. "Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption”, Appl. Surf. Sci. vol. 456, pp. 487-492 (2018)
Wei Liu,et al. "Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells”, Opt. Express vol. 36, pp. 3427-3434 (2018)
Wei Liu,et al. "Influence of indium content on the unintentional background doping and device performance of InGaN/GaN multiple-quantum-well solar cells”, IEEE J. Photovolt. vol. 7, pp. 1017-1023 (2017)
Wei Liu,et al. "Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination”, J. Alloy Compd. vol. 725, pp. 1130-1135 (2017)
Wei Liu,et al. "Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement”, Mater. Res. Express vol. 4, pp. 045906 (2017)
Wei Liu,et al. "Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes”, J. Phys. D Appl. Phys. vol. 49, pp. 145104 (2016)
Wei Liu,et al. "Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes”, Superlattice Microst. vol. 96, pp. 220-225 (2016)
Wei Liu,et al. "Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells”, Opt. Express vol. 23, pp. 15935-15943 (2015)
Wei Liu,et al. "Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness”, J. Alloy Compd. vol. 625, pp. 266–270 (2015)
Wei Liu,et al. "Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells”, J. Vac. Sci. Technol. A vol. 33, pp. 061502 (2015)
Wei Liu,et al. "The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters”, Superlattice Microst. vol. 88, pp. 50-55 (2015)
获奖情况:
社会兼职: